Seung Chul Song

Publication Activity (10 Years)

Years Active: 2011-2019
Publications (10 Years): 3

Top Topics

Random Access Memory

Power Consumption

Top Venues

IEEE Trans. Circuits Syst. I Regul. Pap.

IEEE Trans. Very Large Scale Integr. Syst.

Microelectron. Reliab.

IEEE J. Solid State Circuits

Publications

Hanwool Jeong, Juhyun Park, Seung Chul Song, Seong-Ook Jung
Self-Timed Pulsed Latch for Low-Voltage Operation With Reduced Hold Time. IEEE J. Solid State Circuits 54 (8) (2019)
Hanwool Jeong, Tae Woo Oh, Seung Chul Song, Seong-Ook Jung
Sense-Amplifier-Based Flip-Flop With Transition Completion Detection for Low-Voltage Operation. IEEE Trans. Very Large Scale Integr. Syst. 26 (4) (2018)
Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung
Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology. IEEE Trans. Circuits Syst. I Regul. Pap. (7) (2016)
Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung
Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology. IEEE Trans. Very Large Scale Integr. Syst. 23 (11) (2015)
Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong-Ook Jung
SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit. IEEE Trans. Circuits Syst. I Regul. Pap. (6) (2015)
Jason Woo, P. Y. Chien, Frank Yang, Seung Chul Song, P. R. Chidi Chidambaram, Joseph Wang, Geoffrey Yeap
Improved device variability in scaled MOSFETs with deeply retrograde channel profile. Microelectron. Reliab. 54 (6-7) (2014)
Seung Chul Song, M. Abu-Rahma, Geoffrey Yeap
FinFET based SRAM bitcell design for 32 nm node and below. Microelectron. J. 42 (3) (2011)