SRAM Design for 22-nm ETSOI Technology: Selective Cell Current Boosting and Asymmetric Back-Gate Write-Assist Circuit.
Younghwi YangJuhyun ParkSeung Chul SongJoseph WangGeoffrey YeapSeong-Ook JungPublished in: IEEE Trans. Circuits Syst. I Regul. Pap. (2015)
Keyphrases
- cmos technology
- low voltage
- nm technology
- low power
- power consumption
- power dissipation
- metal oxide semiconductor
- parallel processing
- high speed
- case study
- power reduction
- embedded dram
- silicon on insulator
- future development
- leakage current
- design process
- low cost
- user interface
- decision trees
- circuit design
- image sensor
- logic circuits
- design tools
- random access memory