Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology.
Younghwi YangHanwool JeongSeung Chul SongJoseph WangGeoffrey YeapSeong-Ook JungPublished in: IEEE Trans. Circuits Syst. I Regul. Pap. (2016)