15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
Jonathan ChangYen-Huei ChenGary ChanHank ChengPo-Sheng WangYangsyu LinHidehiro FujiwaraRobin LeeHung-Jen LiaoPing-Wei WangGeoffrey YeapQuincy LiPublished in: ISSCC (2020)
Keyphrases
- high density
- field effect transistors
- low density
- magnetic recording
- metal oxide
- close proximity
- data center
- cmos technology
- high power
- low power
- thin film
- power consumption
- high bandwidth
- chemical vapor deposition
- magnetic tape
- leakage current
- steady state
- mathematical analysis
- solid state
- nm technology
- databases
- space time block