Shashank Banchhor

Publication Activity (10 Years)

Years Active: 2020-2023
Publications (10 Years): 7

Top Topics

Positive And Negative

Top Venues

Publications

Sunil Rathore, Rajeewa Kumar Jaisawal, P. N. Kondekar, Navneet Gandhi, Shashank Banchhor, Young Suh Song, Navjeet Bagga
Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET. IRPS (2023)
Nitanshu Chauhan, Chirag Garg, Kai Ni, Amit Kumar Behera, Sarita Yadav, Shashank Banchhor, Navjeet Bagga, Avirup Dasgupta, Arnab Datta, Sudeb Dasgupta, Anand Bulusu
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI. IRPS (2022)
Jyoti Patel, Shashank Banchhor, Surila Guglani, Avirup Dasgupta, Sourajeet Roy, Anand Bulusu, Sudeb Dasgupta
Design optimization Using Symmetric/Asymmetric Spacer for 14 nm Multi-Fin Tri-gate Fin-FET for Mid-Band 5G Applications. VLSID (2022)
Aniket Gupta, Govind Bajpai, Navjeet Bagga, Shashank Banchhor, Sudeb Dasgupta, Anand Bulusu, Nitanshu Chauhan
Unveiling the Impact of Interface Traps Induced on Negative Capacitance Nanosheet FET: A Reliability Perspective. VDAT (2022)
Aniket Gupta, Govind Bajpai, Priyanshi Singhal, Navjeet Bagga, Om Prakash, Shashank Banchhor, Hussam Amrouch, Nitanshu Chauhan
Traps Based Reliability Barrier on Performance and Revealing Early Ageing in Negative Capacitance FET. IRPS (2021)
Shashank Banchhor, Nitanshu Chauhan, Aditya Doneria, Bulusu Anand
Gain Stabilization Methodology for FinFET Amplifiers Considering Self-Heating Effect. VLSI Design (2021)
Nitanshu Chauhan, Govind Bajpai, Shashank Banchhor, Navjeet Bagga
Analysis of Transient Negative Capacitance Characteristics for Stabilization and Amplification. VDAT (2020)