P. T. Lai

Publication Activity (10 Years)

Years Active: 1994-2016
Publications (10 Years): 3

Top Topics

Scanning Electron Microscope

Top Venues

Microelectron. Reliab.

Publications

R. P. Shi, X. D. Huang, Johnny K. O. Sin, P. T. Lai
as charge-trapping layer for nonvolatile memory applications. Microelectron. Reliab. 65 (2016)
H. H. Lu, J. P. Xu, L. Liu, L. S. Wang, P. T. Lai, W. M. Tang
-plasma treated yittrium-oxynitride as interfacial passivation layer. Microelectron. Reliab. 56 (2016)
Feng Ji, J. P. Xu, L. Liu, W. M. Tang, P. T. Lai
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. Microelectron. Reliab. 57 (2016)
X. D. Huang, R. P. Shi, C. H. Leung, P. T. Lai
with and without nitridation for nonvolatile memory applications. Microelectron. Reliab. 54 (11) (2014)
L. X. Qian, P. T. Lai
A study on the electrical characteristics of InGaZnO thin-film transistor with HfLaO gate dielectric annealed in different gases. Microelectron. Reliab. 54 (11) (2014)
J. X. Chen, Jing-Ping Xu, L. Liu, X. D. Huang, P. T. Lai
as dual tunnel layer in Charge-Trapping nonvolatile memory. Microelectron. Reliab. 54 (2) (2014)
Jerry Yu, Y. Liu, F. X. Cai, Mahnaz Shafiei, Gang Chen, Nunzio Motta, Wojtek Wlodarski, Kourosh Kalantar-Zadeh, P. T. Lai
A comparison study on hydrogen sensing performance of Pt/MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3. NEMS (2013)
X. D. Huang, P. T. Lai, Johnny K. O. Sin
/HfON stack as charge-trapping layer. Microelectron. Reliab. 52 (11) (2012)
Q. B. Tao, P. T. Lai
Improved performance of GeON as charge storage layer in flash memory by optimal annealing. Microelectron. Reliab. 52 (11) (2012)
Gang Chen, Jerry Yu, P. T. Lai
as gate insulator. Microelectron. Reliab. 52 (8) (2012)
J. P. Xu, X. Xiao, P. T. Lai
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode. Microelectron. Reliab. 50 (8) (2010)
L. Liu, J. P. Xu, L. L. Chen, P. T. Lai
stacked tunneling dielectric. Microelectron. Reliab. 49 (8) (2009)
W. M. Tang, Cheung H. Leung, P. T. Lai
as gate insulator. Microelectron. Reliab. 48 (11-12) (2008)
F. Ji, J. P. Xu, P. T. Lai, J. G. Guan
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric. Microelectron. Reliab. 48 (5) (2008)
J. P. Xu, Y. P. Li, P. T. Lai, W. B. Chen, S. G. Xu, J. G. Guan
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects. Microelectron. Reliab. 48 (1) (2008)
W. M. Tang, Cheung H. Leung, P. T. Lai
Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor. DELTA (2008)
J. P. Xu, F. Ji, P. T. Lai, J. G. Guan
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric. Microelectron. Reliab. 48 (2) (2008)
C. X. Li, X. Zou, P. T. Lai, J. P. Xu, C. L. Chan
anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron. Reliab. 48 (4) (2008)
W. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. Microelectron. Reliab. 47 (6) (2007)
X. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. Microelectron. Reliab. 47 (2-3) (2007)
Bing-Liang Yang, Paul C. K. Kwok, P. T. Lai
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection. Microelectron. Reliab. 46 (12) (2006)
Bing-Liang Yang, P. T. Lai, Hei Wong
Conduction mechanisms in MOS gate dielectric films. Microelectron. Reliab. 44 (5) (2004)
P. T. Lai, J. P. Xu, H. P. Wu, C. L. Chan
plus trichloroethylene. Microelectron. Reliab. 44 (4) (2004)
David C. T. Or, P. T. Lai, Johnny K. O. Sin, Paul C. K. Kwok, J. P. Xu
O or NO plasma nitridation. Microelectron. Reliab. 43 (1) (2003)
Bing-Liang Yang, N. W. Cheung, S. Denholm, J. Shao, Hei Wong, P. T. Lai, Y. C. Cheng
plasma immersion ion implantation. Microelectron. Reliab. 42 (12) (2002)
S. Chakraborty, P. T. Lai, Paul C. K. Kwok
MOS characteristics of NO-grown oxynitrides on n-type 6H-SiC. Microelectron. Reliab. 42 (3) (2002)
P. T. Lai, Y. C. Cheng
A closed-form delay expression for digital BiCMOS circuits with high-injection effects. IEEE J. Solid State Circuits 29 (5) (1994)