anneal on Ge MOS capacitors with HfTiO gate dielectric.
C. X. LiX. ZouP. T. LaiJ. P. XuC. L. ChanPublished in: Microelectron. Reliab. (2008)
Keyphrases
- silicon dioxide
- silicon nitride
- gate dielectrics
- leakage current
- high temperature
- electrical properties
- flip flops
- high density
- short circuit
- space charge
- integrated circuit
- transmission electron microscopy
- case study
- multiple input
- expert systems
- search algorithm
- artificial intelligence
- mathematical analysis
- data sets