Gate leakage properties of MOS devices with tri-layer high-k gate dielectric.

W. B. Chen J. P. Xu P. T. Lai Y. P. Li S. G. Xu

Published in: Microelectron. Reliab. (2007)

Keyphrases

silicon dioxide
leakage current
high temperature
gate insulator
low voltage
mobile devices
multiple input
nano scale
small size
cmos technology
data sets
high precision
space charge
wide range
gate dielectrics
electrical properties
information retrieval