Dimitri Soussan

Publication Activity (10 Years)

Years Active: 2012-2016
Publications (10 Years): 1

Top Topics

Memory Subsystem

Silicon On Insulator

Injection Lasers

Error Tolerance

Top Venues

Publications

Fady Abouzeid, Christophe Bernicot, Sylvain Clerc, Jean-Marc Daveau, Gilles Gasiot, Daniel Noblet, Dimitri Soussan, Philippe Roche
-A53 using static biasing-anticipation. ESSCIRC (2016)
Fady Abouzeid, Sylvain Clerc, Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Damien Croain, Gilles Gasiot, Dimitri Soussan, Philippe Roche
28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors. ESSCIRC (2015)
Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis. IRPS (2015)
Sylvain Clerc, Mehdi Saligane, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Cyril Bottoni, David Bol, Julien De Vos, Dominique Zamora, Benjamin Coeffic, Dimitri Soussan, Damien Croain, Mehdi Naceur, Pierre Schamberger, Philippe Roche, Dennis Sylvester
8.4 A 0.33V/-40°C process/temperature closed-loop compensation SoC embedding all-digital clock multiplier and DC-DC converter exploiting FDSOI 28nm back-gate biasing. ISSCC (2015)
Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Victor Malherbe, Philippe Roche
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs. IRPS (2015)
Dimitri Soussan, Alexandre Valentian, Sylvain Majcherczak, Marc Belleville
A mixed LPDDR2 impedance calibration technique exploiting 28nm Fully-Depleted SOI Back-Biasing. ICICDT (2012)
Sylvain Clerc, Fady Abouzeid, Gilles Gasiot, David Gauthier, Dimitri Soussan, Philippe Roche
A 0.32V, 55fJ per bit access energy, CMOS 65nm bit-interleaved SRAM with radiation Soft Error tolerance. ICICDT (2012)