Anton J. Bauer

Publication Activity (10 Years)

Years Active: 2001-2011
Publications (10 Years): 0

Publications

Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. Microelectron. Reliab. 51 (8) (2011)
Albena Paskaleva, Martin Lemberger, Anton J. Bauer
Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. Microelectron. Reliab. 47 (12) (2007)
Martin Lemberger, A. Baunemann, Anton J. Bauer
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors. Microelectron. Reliab. 47 (4-5) (2007)
Mathias Rommel, Anton J. Bauer, Heiner Ryssel
Quantitative oxide charge determination by photocurrent analysis. Microelectron. Reliab. 47 (4-5) (2007)
Albena Paskaleva, Anton J. Bauer, Martin Lemberger
O films. Microelectron. Reliab. 45 (7-8) (2005)
Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectron. Reliab. 45 (5-6) (2005)
Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. Microelectron. Reliab. 43 (8) (2003)
S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. Microelectron. Reliab. 41 (7) (2001)
Matthias Beichele, Anton J. Bauer, Heiner Ryssel
O ambient. Microelectron. Reliab. 41 (7) (2001)
Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectron. Reliab. 41 (7) (2001)