Rick Carter

Publication Activity (10 Years)

Years Active: 2016-2022
Publications (10 Years): 5

Top Topics

Technical Challenges

Sufficiently High

Power Consumption

Silicon Nitride

Top Venues

IEEE Trans. Very Large Scale Integr. Syst.

Publications

Nishtha S. Gaul, Akhilesh Jaiswal, Hongsik Yoon, Taeyoung Lee, Kazutaka Yamane, Joseph Versaggi, Rick Carter, Bipul C. Paul
A Physics based MTJ Compact Model for State-of-the-Art and Emerging STT-MRAM Failure Analysis and Yield Enhancement. IMW (2022)
Randy W. Mann, Meixiong Zhao, Oh Sung Kwon, Xi Cao, Sanjay Parihar, Muhammed Ahosan Ul Karim, Jack M. Higman, Joseph Versaggi, Rick Carter
Bias-Dependent Variation in FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 28 (5) (2020)
Randy W. Mann, Meixiong Zhao, Sanjay Parihar, Qun Gao, Ankur Arya, Carl Radens, Shesh Mani Pandey, Joseph Versaggi, Jack M. Higman, Rick Carter
An Extrinsic Device and Leakage Mechanism in Advanced Bulk FinFET SRAM. IEEE Trans. Very Large Scale Integr. Syst. 27 (8) (2019)
D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. ICICDT (2017)
D. H. Triyoso, Rick Carter, J. Kluth, K. Hempel, M. Gribelyuk, L. Kang, A. Kumar, B. Mulfinger, P. Javorka, K. Punchihewa, A. Child, T. McArdle, J. Holt, S. Straub, R. Sporer, P. Chen
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges. ICICDT (2016)