F. Koehler

Publication Activity (10 Years)

Years Active: 2017-2017
Publications (10 Years): 1

Top Topics

Field Effect Transistors

Sufficiently High

Silicon Nitride

Top Venues

Publications

D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. ICICDT (2017)