Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor.
D. H. TriyosoG. R. MulfingerK. HempelH. TaoF. KoehlerL. KangA. KumarT. McArdleJ. HoltA. L. ChildS. StraubF. LudwigZ. ChenJ. KluthRick CarterPublished in: ICICDT (2017)
Keyphrases
- silicon dioxide
- silicon nitride
- leakage current
- high temperature
- field effect transistors
- high levels
- significantly lower
- high correlation
- wide range
- small size
- high density
- high speed
- high sensitivity
- high rate
- sufficiently high
- multi layer
- real time
- database
- transmission line
- multiple input
- steady state
- high precision
- space charge
- decision trees