D. H. Triyoso

Publication Activity (10 Years)

Years Active: 2012-2017
Publications (10 Years): 3

Top Topics

Sufficiently High

Field Effect Transistors

Technical Challenges

Top Venues

Publications

D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. ICICDT (2017)
Wenke Weinreich, Konrad Seidel, Patrick Polakowski, Maximilian Drescher, A. Gummenscheimer, Mark G. Nolan, L. Cheng, D. H. Triyoso
La-doped ZrO2 based BEoL decoupling capacitors. ICICDT (2016)
D. H. Triyoso, Rick Carter, J. Kluth, K. Hempel, M. Gribelyuk, L. Kang, A. Kumar, B. Mulfinger, P. Javorka, K. Punchihewa, A. Child, T. McArdle, J. Holt, S. Straub, R. Sporer, P. Chen
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges. ICICDT (2016)
D. H. Triyoso, Wenke Weinreich, Konrad Seidel, Mark G. Nolan, Patrick Polakowski, D. Utess, Susanne Ohsiek, K. Dittmar, M. Weisheit, M. Licbau, R. Fox
ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM. ICICDT (2014)
D. H. Triyoso, V. Jaschke, Jeff Shu, S. Mutas, Klaus Hempel, Jamie K. Schaeffer, Markus Lenski
Robust PEALD SiN spacer for gate first high-k metal gate integration. ICICDT (2012)