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Robust PEALD SiN spacer for gate first high-k metal gate integration.

D. H. TriyosoV. JaschkeJeff ShuS. MutasKlaus HempelJamie K. SchaefferMarkus Lenski
Published in: ICICDT (2012)
Keyphrases
  • field effect transistors
  • wide range
  • multiple input
  • nano scale
  • case study
  • computationally efficient
  • databases
  • website
  • least squares
  • high density
  • mathematical analysis
  • high robustness