Mridula Gupta

Publication Activity (10 Years)

Years Active: 2003-2022
Publications (10 Years): 11

Top Topics

Schottky Barrier

Numerical Analysis

Field Effect Transistors

Global Motion Estimation

Top Venues

Microelectron. J.

Microelectron. Reliab.

Publications

Neha, Vandana Kumari, Mridula Gupta, Manoj Saxena
Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment. Microelectron. J. 122 (2022)
Khushwant Sehra, Jeffin Shibu, Meena Mishra, Mridula Gupta, Dipendra Singh Rawal, Manoj Saxena
Implications of Field Plate HEMT Towards Power Performance at Microwave X - Band. VDAT (2022)
Khushwant Sehra, Vandana Kumari, Poonam Kasturi, Mridula Gupta, Meena Mishra, Dipendra Singh Rawal, Manoj Saxena
Interplay Between γ-Ray Irradiation and 3DEG for Dosimeter Applications. IEEE Access 10 (2022)
Anupama Anand, Reeta, Dipendra Singh Rawal, Rakhi Narang, Meena Mishra, Manoj Saxena, Mridula Gupta
A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width. Microelectron. J. 118 (2021)
Milan Jain, Mridula Gupta, Amarjeet Singh, Vikas Chandan
Beyond Control: Enabling Smart Thermostats for Leakage Detection. Proc. ACM Interact. Mob. Wearable Ubiquitous Technol. 3 (1) (2019)
Milan Jain, Mridula Gupta, Amarjeet Singh, Vikas Chandan
Beyond Control: Enabling Smart Thermostats For Leakage Detection. CoRR (2019)
Preeti Singh, Vandana Kumari, Manoj Saxena, Mridula Gupta
Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study. VDAT (2018)
Ajay Singh, Rakhi Narang, Manoj Saxena, Mridula Gupta
Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor. VDAT (2017)
Rakhi Narang, Mridula Gupta, Manoj Saxena
Improved Gate Modulation in Tunnel Field Effect Transistors with Non-rectangular Tapered Y-Gate Geometry. VDAT (2017)
Vandana Kumari, Manoj Saxena, Mridula Gupta
Variability Investigation of Double Gate JunctionLess (DG-JL) Transistor for Circuit Design Perspective. VDAT (2017)
Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. ICM (2015)
Yogesh Pratap, Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. Microelectron. J. 45 (4) (2014)
Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectron. J. 45 (11) (2014)
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. Microelectron. Reliab. 54 (1) (2014)
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
Drain current model for a gate all around (GAA) p-n-p-n tunnel FET. Microelectron. J. 44 (6) (2013)
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. Microelectron. Reliab. 53 (2) (2013)
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. Microelectron. Reliab. 52 (6) (2012)
Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectron. Reliab. 52 (1) (2012)
Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectron. J. 43 (1) (2012)
Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectron. Reliab. 52 (6) (2012)
Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. Microelectron. Reliab. 52 (8) (2012)
Neha Verma, Jyotika Jogi, Mridula Gupta, R. S. Gupta
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT. UKSim (2012)
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. Microelectron. Reliab. 52 (8) (2012)
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectron. Reliab. 51 (3) (2011)
Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. Microelectron. Reliab. 49 (12) (2009)
Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. Microelectron. Reliab. 49 (7) (2009)
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. Microelectron. J. 39 (12) (2008)
Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectron. J. 38 (8-9) (2007)
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. Microelectron. J. 38 (10-11) (2007)
Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectron. J. 38 (4-5) (2007)
Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. Microelectron. J. 37 (11) (2006)
Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability. Microelectron. J. 37 (9) (2006)
Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectron. J. 37 (7) (2006)
N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor. Microelectron. J. 34 (1) (2003)