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Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Sona P. Kumar
Anju Agrawal
Rishu Chaujar
R. S. Gupta
Mridula Gupta
Published in:
Microelectron. Reliab. (2011)
Keyphrases
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field effect transistors
high speed
high density
metal oxide semiconductor
real time
image processing
integrated circuit
vector quantizer
three dimensional
wide range
primal dual