R. S. Gupta

Publication Activity (10 Years)

Years Active: 2003-2023
Publications (10 Years): 9

Top Topics

Analytical Model

Top Venues

Microelectron. J.

Microelectron. Reliab.

Publications

Prajvi Udar, Anubha Goel, R. S. Gupta
Quantum Effect Dependent Modelling of Short Channel Junctionless Double Gate Stack(SC-JL-DG) MOSFET for High Frequency Analog Applications. Microelectron. J. 134 (2023)
Nisha Chugh, Subhasis Haldar, Monika Bhattacharya, R. S. Gupta
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach. Microelectron. J. 138 (2023)
Sumedha Gupta, Neeta Pandey, R. S. Gupta
Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications. Microelectron. J. 139 (2023)
Swati Sharma, Vandana Nath, S. S. Deswal, R. S. Gupta
Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application. Microelectron. J. 137 (2023)
Prajvi Udar, Anubha Goel, R. S. Gupta
Nanoscale Temperature Dependent Quantum-Effect Analytical Model of Short- Channel, Junction-Less, Double-Gate Stack (SC-JL-DG) MOSFET for Analog Applications at Higher Frequencies. Microelectron. J. 141 (2023)
Amit Das, Sonam Rewari, Binod Kumar Kanaujia, S. S. Deswal, R. S. Gupta
Ge/Si interfaced label free nanowire BIOFET for biomolecules detection - analytical analysis. Microelectron. J. 138 (2023)
Swati Sharma, Vandana Nath, S. S. Deswal, R. S. Gupta
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor. Microelectron. J. 129 (2022)
Pritam Sharma, Neetika Sharma, R. S. Gupta, Jyotika Jogi
Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications. UKSim (2018)
Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. ICM (2015)
Yogesh Pratap, Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. Microelectron. J. 45 (4) (2014)
Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectron. J. 45 (11) (2014)
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. Microelectron. Reliab. 54 (1) (2014)
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
Drain current model for a gate all around (GAA) p-n-p-n tunnel FET. Microelectron. J. 44 (6) (2013)
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. Microelectron. Reliab. 53 (2) (2013)
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. Microelectron. Reliab. 52 (6) (2012)
Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectron. Reliab. 52 (1) (2012)
Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectron. J. 43 (1) (2012)
Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectron. Reliab. 52 (6) (2012)
Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. Microelectron. Reliab. 52 (8) (2012)
Neha Verma, Jyotika Jogi, Mridula Gupta, R. S. Gupta
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT. UKSim (2012)
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. Microelectron. Reliab. 52 (8) (2012)
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectron. Reliab. 51 (3) (2011)
Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. Microelectron. Reliab. 49 (12) (2009)
Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. Microelectron. Reliab. 49 (7) (2009)
S. U. Siddiqui, N. K. Verma, Shailesh Mishra, R. S. Gupta
Mathematical modelling of pulsatile flow of Casson's fluid in arterial stenosis. Appl. Math. Comput. 210 (1) (2009)
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. Microelectron. J. 39 (12) (2008)
Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectron. J. 38 (8-9) (2007)
Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. Microelectron. J. 38 (3) (2007)
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. Microelectron. J. 38 (10-11) (2007)
Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectron. J. 38 (4-5) (2007)
Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. Microelectron. J. 37 (11) (2006)
Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability. Microelectron. J. 37 (9) (2006)
Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectron. J. 37 (7) (2006)
N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor. Microelectron. J. 34 (1) (2003)