Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation.
Manoj KumarSubhasis HaldarMridula GuptaR. S. GuptaPublished in: Microelectron. J. (2014)
Keyphrases
- low power
- cmos technology
- schottky barrier
- mixed signal
- field effect transistors
- power consumption
- nm technology
- wireless transmission
- vlsi architecture
- low cost
- high speed
- ultra low power
- single chip
- mathematical analysis
- low voltage
- energy dissipation
- image sensor
- cmos image sensor
- video processing
- global motion estimation
- power dissipation
- steady state
- digital signal processing
- low power consumption
- logic circuits
- wireless networks
- optical flow
- real time
- radio frequency
- parallel processing