Bingxu Ning

Publication Activity (10 Years)

Years Active: 2011-2022
Publications (10 Years): 4

Top Topics

High Sensitivity

Fuzzy Logic Controller

State Transition

Noise Cancellation

Top Venues

Microelectron. Reliab.

Sci. China Inf. Sci.

Publications

Chang Cai, Bingxu Ning, Xue Fan, Tianqi Liu, Lingyun Ke, Gengsheng Chen, Jian Yu, Ze He, Liewei Xu, Jie Liu
SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs. Sci. China Inf. Sci. 65 (2) (2022)
Shuai Gao, Chang Cai, Bingxu Ning, Ze He, Jie Liu
Characterization and Classification of Heavy Ion Induced Failures in FPGA-based Logical Circuits. ASICON (2021)
Chang Cai, Tianqi Liu, Jie Liu, Gengsheng Chen, Luchang Ding, Kai Zhao, Bingxu Ning, Mingjie Shen
Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs. IRPS (2020)
Shuang Fan, Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi, Chao Peng, Lei Song, Lihua Dai
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. Microelectron. Reliab. 56 (2016)
Chao Peng, Zhiyuan Hu, Zhengxuan Zhang, Huixiang Huang, Bingxu Ning, Dawei Bi
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. Microelectron. Reliab. 54 (4) (2014)
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Ming Chen, Shichang Zou
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. J. 44 (2) (2013)
Bingxu Ning, Dawei Bi, Huixiang Huang, Zhengxuan Zhang, Zhiyuan Hu, Ming Chen, Shichang Zou
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. Microelectron. Reliab. 53 (2) (2013)
Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. Microelectron. Reliab. 52 (1) (2012)
Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou
Total ionizing dose effects in elementary devices for 180-nm flash technologies. Microelectron. Reliab. 51 (8) (2011)
Bingxu Ning, Zhiyuan Hu, Zhengxuan Zhang, Zhangli Liu, Ming Chen, Dawei Bi, Shichang Zou
The impact of total ionizing radiation on body effect. Microelectron. J. 42 (12) (2011)
Zhangli Liu, Zhiyuan Hu, Zhengxuan Zhang, Hua Shao, Ming Chen, Dawei Bi, Bingxu Ning, Shichang Zou
Comparison of TID response in core, input/output and high voltage transistors for flash memory. Microelectron. Reliab. 51 (6) (2011)
Zhiyuan Hu, Zhangli Liu, Hua Shao, Zhengxuan Zhang, Bingxu Ning, Ming Chen, Dawei Bi, Shichang Zou
Impact of within-wafer process variability on radiation response. Microelectron. J. 42 (6) (2011)