On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET's.
Boualem DjezzarPublished in: Microelectron. Reliab. (2002)
Keyphrases
- field effect transistors
- silicon dioxide
- leakage current
- fuel cell
- high density
- steady state
- room temperature
- si sio
- electron microscopy
- electrical properties
- x ray
- infrared
- metal oxide
- mathematical analysis
- data sets
- correlation coefficient
- three dimensional
- fault detection
- low voltage
- transmission electron microscopy
- expert systems
- case study