Boualem Djezzar

Publication Activity (10 Years)

Years Active: 2002-2020
Publications (10 Years): 1

Top Topics

Reliability Analysis

Diffusion Processes

Top Venues

Microelectron. Reliab.

J. Electron. Test.

IET Circuits Devices Syst.

Publications

Amel Chenouf, Boualem Djezzar, Hamid Bentarzi, Abdelmadjid Benabdelmoumene
Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigation. IET Circuits Devices Syst. 14 (4) (2020)
Hakim Tahi, Boualem Djezzar, Karim Benmassai, Mohamed Boubaaya, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil
Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction. IDT (2014)
Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Bécharia Nadji
An Accurate Combination of on-the-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction. J. Electron. Test. 30 (4) (2014)
Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil
Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique. Microelectron. Reliab. 54 (5) (2014)
Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf, Mohamed Goudjil, Rafik Serhane, Fayçal Hadj Larbi, Mohamed Kechouane
Does NBTI effect in MOS transistors depend on channel length? ICM (2014)
Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Hakim Tahi, Mohamed Goudjil
Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses. IDT (2014)
Mohamed Boubaaya, Hakim Tahi, Boualem Djezzar, Karim Benmassai, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Djamila Doumaz, Abdelhak Feraht Hemida
, H and H2 as diffusion species. IDT (2014)
Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene
A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues. Microelectron. Reliab. 53 (4) (2013)
Boualem Djezzar
On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET's. Microelectron. Reliab. 42 (12) (2002)