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Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.
D. Zander
F. Saigné
A. Meinertzhagen
C. Petit
Published in:
Microelectron. Reliab. (2003)
Keyphrases
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field effect transistors
electrical properties
silicon dioxide
leakage current
silicon nitride
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steady state
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space charge
thin film
mathematical analysis
room temperature
metal oxide
electron microscopy
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