D. Zander

Publication Activity (10 Years)

Years Active: 2001-2007
Publications (10 Years): 0

Publications

C. Petit, D. Zander
Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides. Microelectron. Reliab. 47 (2-3) (2007)
C. Petit, D. Zander
Stress induced gate-drain leakage current in ultra-thin gate oxide. Microelectron. Reliab. 47 (12) (2007)
D. Zander
Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides. Microelectron. Reliab. 45 (5-6) (2005)
C. Petit, A. Meinertzhagen, D. Zander, O. Simonetti, M. Fadlallah, T. Maurel
Low voltage SILC and P- and N-MOSFET gate oxide reliability. Microelectron. Reliab. 45 (3-4) (2005)
D. Zander, F. Saigné, A. Meinertzhagen, C. Petit
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. Microelectron. Reliab. 43 (9-11) (2003)
D. Zander, F. Saigné, A. Meinertzhagen
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. Microelectron. Reliab. 41 (9-10) (2001)
D. Zander, C. Petit, F. Saigné, A. Meinertzhagen
High field stress at and above room temperature in 2.3 nm thick oxides. Microelectron. Reliab. 41 (7) (2001)