The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon.
Yongseok AhnSanghyun LeeGwanhyeob KohTaeyoung ChungKinam KimPublished in: Microelectron. Reliab. (2002)
Keyphrases
- si sio
- silicon dioxide
- gate dielectrics
- field effect transistors
- electrical properties
- leakage current
- high density
- steady state
- thin film
- anisotropic diffusion
- silicon nitride
- diffusion model
- diffusion process
- mathematical analysis
- high temperature
- metal oxide
- diffusion processes
- multiple input
- power line
- information diffusion
- semiconductor devices
- edge detection