Licai Hao

Publication Activity (10 Years)

Years Active: 2022-2024
Publications (10 Years): 11

Top Topics

Dynamic Random Access Memory

Leakage Current

Top Venues

Microelectron. J.

IEICE Electron. Express

IEEE Trans. Very Large Scale Integr. Syst.

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Licai Hao, Xinyi Zhang, Chenghu Dai, Qiang Zhao, Wenjuan Lu, Chunyu Peng, Yongliang Zhou, Zhiting Lin, Xiulong Wu
Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies. IEEE Trans. Very Large Scale Integr. Syst. 32 (4) (2024)
Shiyu Zhao, Qiang Zhao, Licai Hao, Chunyu Peng, Yaling Wang, Wenjuan Lu, Zhiting Lin, Xiulong Wu
Design of polarity hardening SRAM for mitigating single event multiple node upsets. Microelectron. J. 149 (2024)
Zhiting Lin, Changxin Yue, Ke Li, Qiushi Feng, Siyan Li, Yue Zhao, Yuanyang Wang, Jiaqi Chen, Wenjuan Lu, Chunyu Peng, Qiang Zhao, Chenghu Dai, Licai Hao, Xiulong Wu
Cross-coupled 4T2R multi-logic in-memory computing circuit design. Microelectron. J. 147 (2024)
Li Liu, Dele Tai, Bin Qiang, Lijun Guan, Chunyu Peng, Chenghu Dai, Licai Hao, Wenjuan Lu, Zhiting Lin, Qiang Zhao, Xiulong Wu
Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory. IEEE Trans. Circuits Syst. II Express Briefs 71 (4) (2024)
Yongliang Zhou, Zixuan Zhou, Yiming Wei, Zhen Yang, Xiao Lin, Chenghu Dai, Licai Hao, Chunyu Peng, Hao Cai, Xiulong Wu
A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 71 (1) (2024)
Licai Hao, Yaling Wang, Yunlong Liu, Shiyu Zhao, Xinyi Zhang, Yang Li, Wenjuan Lu, Chunyu Peng, Qiang Zhao, Yongliang Zhou, Chenghu Dai, Zhiting Lin, Xiulong Wu
Low-Cost and Highly Robust Quadruple Node Upset Tolerant Latch Design. IEEE Trans. Very Large Scale Integr. Syst. 32 (5) (2024)
Licai Hao, Bin Qiang, Chenghu Dai, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Li Liu, Qiang Zhao, Xiulong Wu, Fei Sun
Radiation-hardened 14T SRAM cell by polar design for space applications. IEICE Electron. Express 20 (13) (2023)
Chenghu Dai, Yuanyuan Du, Qi Shi, Ruixuan Wang, Hao Zheng, Wenjuan Lu, Chunyu Peng, Licai Hao, Zhiting Lin, Xiulong Wu
Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design. Microelectron. J. 132 (2023)
Licai Hao, Li Liu, Qi Shi, Bin Qiang, Zhengya Li, Nianlong Liu, Chenghu Dai, Qiang Zhao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu
Design of radiation-hardened memory cell by polar design for space applications. Microelectron. J. 132 (2023)
Pengfei Li, Xiuying Wang, Yin Zhang, Haoyu Wang, Jianjie Lu, Qiang Zhao, Licai Hao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu
Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology. Microelectron. J. 141 (2023)
Qiang Zhao, Hanwen Dong, Licai Hao, Xiuying Wang, Chunyu Peng, Xiulong Wu
Novel radiation-hardened latch design for space-radiation environments. IEICE Electron. Express 19 (13) (2022)