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Chenghu Dai
Publication Activity (10 Years)
Years Active: 2023-2024
Publications (10 Years): 5
Top Topics
Leakage Current
Electronic Circuits
X Ray
Design Space
Top Venues
Microelectron. J.
IEEE Trans. Circuits Syst. I Regul. Pap.
IEICE Electron. Express
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Publications
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Chenghu Dai
,
Zihua Ren
,
Lijun Guan
,
Haitao Liu
,
Mengya Gao
,
Wenjuan Lu
,
Zhiyong Pang
,
Chunyu Peng
,
Xiulong Wu
A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations.
Microelectron. J.
144 (2024)
Yongliang Zhou
,
Zixuan Zhou
,
Yiming Wei
,
Zhen Yang
,
Xiao Lin
,
Chenghu Dai
,
Licai Hao
,
Chunyu Peng
,
Hao Cai
,
Xiulong Wu
A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.
IEEE Trans. Circuits Syst. I Regul. Pap.
71 (1) (2024)
Licai Hao
,
Bin Qiang
,
Chenghu Dai
,
Chunyu Peng
,
Wenjuan Lu
,
Zhiting Lin
,
Li Liu
,
Qiang Zhao
,
Xiulong Wu
,
Fei Sun
Radiation-hardened 14T SRAM cell by polar design for space applications.
IEICE Electron. Express
20 (13) (2023)
Chenghu Dai
,
Yuanyuan Du
,
Qi Shi
,
Ruixuan Wang
,
Hao Zheng
,
Wenjuan Lu
,
Chunyu Peng
,
Licai Hao
,
Zhiting Lin
,
Xiulong Wu
Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.
Microelectron. J.
132 (2023)
Licai Hao
,
Li Liu
,
Qi Shi
,
Bin Qiang
,
Zhengya Li
,
Nianlong Liu
,
Chenghu Dai
,
Qiang Zhao
,
Chunyu Peng
,
Wenjuan Lu
,
Zhiting Lin
,
Xiulong Wu
Design of radiation-hardened memory cell by polar design for space applications.
Microelectron. J.
132 (2023)