Lawrence F. Wagner

Publication Activity (10 Years)

Years Active: 1996-2004
Publications (10 Years): 0

Publications

Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, Liang-Hung Lu, Melanie Sherony, Yue Tan, Robert A. Groves, Robert Trzcinski, Mohamed Talbi, Asit Ray, Lawrence F. Wagner
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology. IEEE J. Solid State Circuits 39 (9) (2004)
Neric H. W. Fong, Jonghae Kim, Jean-Olivier Plouchart, Noah Zamdmer, Duixian Liu, Lawrence F. Wagner, Calvin Plett, Garry Tarr
A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology. IEEE J. Solid State Circuits 39 (5) (2004)
Jean-Olivier Plouchart, Noah Zamdmer, Jonghae Kim, Melanie Sherony, Yue Tan, Asit Ray, Mohamed Talbi, Lawrence F. Wagner, Kun Wu, Naftali E. Lustig, Shreesh Narasimha, Patricia O'Neil, Nghia Phan, Michael Rohn, James Strom, David M. Friend, Stephen V. Kosonocky, Daniel R. Knebel, Suhwan Kim, Keith A. Jenkins, Michel M. Rivier
Application of an SOI 0.12-µm CMOS technology to SoCs with low-power and high-frequency circuits. IBM J. Res. Dev. 47 (5-6) (2003)
Jean-Olivier Plouchart, Jonghae Kim, Hector Recoules, Noah Zamdmer, Yue Tan, Melanie Sherony, Asit Ray, Lawrence F. Wagner
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology. ISLPED (2003)
Jonghae Kim, Jean-Olivier Plouchart, Noah Zamdmer, Melanie Sherony, Yue Tan, Meeyoung Yoon, Robert Trzcinski, Mohamed Talbi, John Safran, Asit Ray, Lawrence F. Wagner
A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate. ISLPED (2003)
Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, Liang-Hung Lu, Melanie Sherony, Yue Tan, Robert Groves, Robert Trzcinski, Mohamed Talbi, Asit Ray, Lawrence F. Wagner
A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology. CICC (2003)
Neric H. W. Fong, Jean-Olivier Plouchart, Noah Zamdmer, Duixian Liu, Lawrence F. Wagner, Calvin Plett, N. Garry Tarr
Design of wide-band CMOS VCO for multiband wireless LAN applications. IEEE J. Solid State Circuits 38 (8) (2003)
Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, Melanie Sherony, Yue Tan, Meeyoung Yoon, Mohamed Talbi, Asit Ray, Lawrence F. Wagner
A 31 GHz CML ring VCO with 5.4 ps delay in a 0.12-μm SOI CMOS technology. ESSCIRC (2003)
Neric H. W. Fong, Jean-Olivier Plouchart, Noah Zamdmer, Duixian Liu, Lawrence F. Wagner, Calvin Plett, Gerry Tarr
A low-voltage multi-GHz VCO with 58% tuning range in SOI CMOS. CICC (2002)
Ghavam G. Shahidi, Atul Ajmera, Fariborz Assaderaghi, Ronald J. Bolam, Harold Hovel, Effendi Leobandung, Werner Rausch, Devendra Sadana, Dominic Schepis, Lawrence F. Wagner, Larry Wissel, Kun Wu, Bijan Davai
Device and circuit design issues in SOI technology. CICC (1999)
Pong-Fei Lu, Ching-Te Chuang, Jin Ji, Lawrence F. Wagner, Chang-Ming Hsieh, Jente B. Kuang, Louis Lu-Chen Hsu, Mario M. Pelella Jr., Shao-Fu Sanford Chu, Carl J. Anderson
Floating-body effects in partially depleted SOI CMOS circuits. IEEE J. Solid State Circuits 32 (8) (1997)
Jente B. Kuang, Somnuk Ratanaphanyarat, Mary Jo Saccamango, Louis L.-C. Hsu, Roy C. Flaker, Lawrence F. Wagner, Shao-Fu Sanford Chu, Ghavam G. Shahidi
SRAM bitline circuits on PD SOI: advantages and concerns. IEEE J. Solid State Circuits 32 (6) (1997)
Colin C. McAndrew, Jerold A. Seitchik, Derek F. Bowers, Mark Dunn, Mark Foisy, Ian Getreu, Marc McSwain, Shahriar Moinian, James Parker, David J. Roulston, Michael Schroter, Paul van Wijnen, Lawrence F. Wagner
VBIC95, the vertical bipolar inter-company model. IEEE J. Solid State Circuits 31 (10) (1996)
Pong-Fei Lu, Jin Ji, Ching-Te Chuang, Lawrence F. Wagner, Chang-Ming Hsieh, Jente Benedict Kuang, ouis Lu-Chen Hsu, Mario M. Pelella Jr., Shao-Fu Sanford Chu, Carl J. Anderson
Floating body effects in partially-depleted SOI CMOS circuits. ISLPED (1996)