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A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology.

Jean-Olivier PlouchartJonghae KimHector RecoulesNoah ZamdmerYue TanMelanie SheronyAsit RayLawrence F. Wagner
Published in: ISLPED (2003)
Keyphrases
  • silicon on insulator
  • power consumption
  • rapid development
  • key technologies
  • case study
  • clock gating
  • nm technology
  • information technology
  • data processing
  • cost effective
  • low power
  • cmos technology