Kyungbae Park

Publication Activity (10 Years)

Years Active: 2015-2019
Publications (10 Years): 5

Top Topics

Statistical Distribution

Top Venues

Microelectron. Reliab.

IEICE Electron. Express

IEEE Trans. Very Large Scale Integr. Syst.

Publications

Ali Ahmed, Kyungbae Park, Saqib Ali Khan, Naeem Maroof, Sanghyeon Baeg
Architectural design tradeoffs in SRAM-based TCAMs. IEICE Electron. Express 16 (13) (2019)
Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. Microelectron. Reliab. 80 (2018)
Ali Ahmed, Kyungbae Park, Sanghyeon Baeg
Resource-Efficient SRAM-Based Ternary Content Addressable Memory. IEEE Trans. Very Large Scale Integr. Syst. 25 (4) (2017)
Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. Microelectron. Reliab. 57 (2016)
Kyungbae Park, Donghyuk Yun, Sanghyeon Baeg
Statistical distributions of row-hammering induced failures in DDR3 components. Microelectron. Reliab. 67 (2016)
GeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams. IRPS (2015)