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Donghyuk Yun
ORCID
Publication Activity (10 Years)
Years Active: 2016-2021
Publications (10 Years): 5
Top Topics
Nm Technology
Statistical Distribution
Root Cause
Low Dose
Top Venues
Microelectron. Reliab.
IRPS
IEEE Access
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Publications
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Donghyuk Yun
,
Myungsang Park
,
GeunYong Bak
,
Sanghyeon Baeg
,
Shi-Jie Wen
Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation.
IEEE Access
9 (2021)
Donghyuk Yun
,
Myungsang Park
,
Chul Seung Lim
,
Sanghyeon Baeg
Study of TID effects on one row hammering using gamma in DDR4 SDRAMs.
IRPS
(2018)
Chul Seung Lim
,
Kyungbae Park
,
GeunYong Bak
,
Donghyuk Yun
,
Myungsang Park
,
Sanghyeon Baeg
,
Shi-Jie Wen
,
Richard Wong
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs.
Microelectron. Reliab.
80 (2018)
Kyungbae Park
,
Chul Seung Lim
,
Donghyuk Yun
,
Sanghyeon Baeg
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology.
Microelectron. Reliab.
57 (2016)
Kyungbae Park
,
Donghyuk Yun
,
Sanghyeon Baeg
Statistical distributions of row-hammering induced failures in DDR3 components.
Microelectron. Reliab.
67 (2016)