Josef Lutz

Publication Activity (10 Years)

Years Active: 2003-2021
Publications (10 Years): 11

Top Topics

Top Venues

Microelectron. Reliab.

IET Circuits Devices Syst.

Publications

Shanmuganathan Palanisamy, Thomas Basler, Josef Lutz, Cesare Künzel, Larissa Wehrhahn-Kilian, Rudolf Elpelt
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density. IRPS (2021)
Martina Gerlach, Peter Seidel, Josef Lutz
Specific aspects regarding evaluation of power cycling tests with SiC devices. IRPS (2020)
Shanmuganathan Palanisamy, Josef Lutz, R. Boldyrjew-Mast, Thomas Basler
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. IRPS (2020)
Josef Lutz, Jörg Franke
Reliability and reliability investigation of wide-bandgap power devices. Microelectron. Reliab. (2018)
Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz
Unified view on energy and electrical failure of the short-circuit operation of IGBTs. Microelectron. Reliab. (2018)
Christian Herold, Peter Seidel, Josef Lutz, Reinhold Bayerer
Topologies for inverter like operation of power cycling tests. Microelectron. Reliab. 64 (2016)
W. Chen, Jörg Franke, Christian Herold, Riteshkumar Bhojani, Josef Lutz
Internal processes in power semiconductors at virtual junction temperature measurement. Microelectron. Reliab. 64 (2016)
Lukas Tinschert, Magnar Hernes, Josef Lutz
Improving the short circuit ruggedness of IGBTs. Microelectron. Reliab. 64 (2016)
Christian Herold, Jörg Franke, Riteshkumar Bhojani, Andre Schleicher, Josef Lutz
Requirements in power cycling for precise lifetime estimation. Microelectron. Reliab. 58 (2016)
Susanne Fichtner, Sophia Frankeser, Josef Lutz, R. Rupp, Thomas Basler, R. Gerlach
Ruggedness of 1200 V SiC MPS diodes. Microelectron. Reliab. 55 (9-10) (2015)
Lukas Tinschert, Atle Rygg Årdal, Tilo Poller, Marco Bohlländer, Magnar Hernes, Josef Lutz
Possible failure modes in Press-Pack IGBTs. Microelectron. Reliab. 55 (6) (2015)
Josef Lutz, Roman Baburske
Some aspects on ruggedness of SiC power devices. Microelectron. Reliab. 54 (1) (2014)
Thomas Basler, M. Pfaffenlehner, Hans Peter Felsl, Franz-Josef Niedernostheide, F. Pfirsch, Hans-Joachim Schulze, Roman Baburske, Josef Lutz
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept. IET Circuits Devices Syst. 8 (3) (2014)
Tilo Poller, Salvatore D'Arco, Magnar Hernes, Atle Rygg Årdal, Josef Lutz
Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs. Microelectron. Reliab. 53 (9-11) (2013)
P. Steinhorst, Tilo Poller, Josef Lutz
Approach of a physically based lifetime model for solder layers in power modules. Microelectron. Reliab. 53 (9-11) (2013)
Salvatore D'Arco, Tore Undeland, Marco Bohlländer, Josef Lutz
A simplified algorithm for predicting power cycling lifetime in Direct Drive wind power systems. SSD (2012)
Thomas Basler, Josef Lutz, Roland Jakob, Thomas Bruckner
Surge current capability of IGBTs. SSD (2012)
Tilo Poller, Thomas Basler, Magnar Hernes, Salvatore D'Arco, Josef Lutz
Mechanical analysis of press-pack IGBTs. Microelectron. Reliab. 52 (9-10) (2012)
Josef Lutz, Roman Baburske
Dynamic avalanche in bipolar power devices. Microelectron. Reliab. 52 (3) (2012)
A. Hensler, D. Wingert, Christian Herold, Josef Lutz, M. Thoben
Thermal impedance spectroscopy of power modules. Microelectron. Reliab. 51 (9-11) (2011)
Birk Heinze, Josef Lutz, Hans Peter Felsl, Hans-Joachim Schulze
Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations. Microelectron. J. 39 (6) (2008)
D. Polenov, Josef Lutz, Hartmut Pröbstle, Andreas Brösse
Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes. IET Circuits Devices Syst. 1 (5) (2007)
Franz-Josef Niedernostheide, Hans-Joachim Schulze, Hans Peter Felsl, Thomas Laska, Ulrich Kellner-Werdehausen, Josef Lutz
Thyristors and IGBTs with integrated self-protection functions. IET Circuits Devices Syst. 1 (5) (2007)
Ralf Siemieniec, Hans-Joachim Schulze, Franz-Josef Niedernostheide, W. Südkamp, Josef Lutz
Compensation and doping effects in heavily helium-radiated silicon for power device applications. Microelectron. J. 37 (3) (2006)
Ralf Siemieniec, Josef Lutz
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. Microelectron. J. 35 (3) (2004)
Josef Lutz, Martin Domeij
Dynamic avalanche and reliability of high voltage diodes. Microelectron. Reliab. 43 (4) (2003)