Jinsu Jeong

Publication Activity (10 Years)

Years Active: 2019-2024
Publications (10 Years): 8

Top Topics

Comprehensive Analysis

Schottky Barrier

Transmission Electron Microscopy

Top Venues

Adv. Intell. Syst.

Publications

Seungjoon Eom, Hyeok Yun, Hyundong Jang, Kyeongrae Cho, Seunghwan Lee, Jinsu Jeong, Rock-Hyun Baek
Neural Compact Modeling Framework for Flexible Model Parameter Selection with High Accuracy and Fast SPICE Simulation. Adv. Intell. Syst. 6 (4) (2024)
Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Junjong Lee, Sanguk Lee, Jaewan Lim, Rock-Hyun Baek
DC Performance Variations by Grain Boundary in Source/Drain Epitaxy of Sub-3-nm Nanosheet Field-Effect Transistors. IEEE Access 10 (2022)
Junjong Lee, Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Sanguk Lee, Rock-Hyun Baek
Monolithic 3D 6T-SRAM Based on Newly Designed Gate and Source/Drain Bottom Contact Schemes. IEEE Access 9 (2021)
Jinsu Jeong, Jun-Sik Yoon, Rock-Hyun Baek
Analysis of TSV-Induced Mechanical Stress and Electrical Noise Coupling in Sub 5-nm Node Nanosheet FETs for Heterogeneous 3D-ICs. IEEE Access 9 (2021)
Jinsu Jeong, Jun-Sik Yoon, Seunghwan Lee, Rock-Hyun Baek
Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application. IEEE Access 8 (2020)
Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek
Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for Extending Toward 5-nm Node. IEEE Access 7 (2019)
Jun-Sik Yoon, Seunghwan Lee, Junjong Lee, Jinsu Jeong, Hyeok Yun, Bohyeon Kang, Rock-Hyun Baek
Source/Drain Patterning FinFETs as Solution for Physical Area Scaling Toward 5-nm Node. IEEE Access 7 (2019)
Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek
Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain. IEEE Access 7 (2019)