A. S. Oates

Publication Activity (10 Years)

Years Active: 2001-2019
Publications (10 Years): 3

Top Topics

Statistical Modeling

Electrical Properties

Top Venues

Publications

M. H. Lin, W. S. Chou, Y. T. Yang, A. S. Oates
Characterization of Critical Peak Current and General Model of Interconnect Systems Under Short Pulse-Width Conditions. IRPS (2019)
Yi Ching Ong, Shou-Chung Lee, A. S. Oates
Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics. IRPS (2018)
Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, Chee Wee Liu
BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown. IRPS (2018)
Shou-Chung Lee, A. S. Oates
On the voltage dependence of copper/low-k dielectric breakdown. IRPS (2015)
M. H. Lin, A. S. Oates
Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnects. IRPS (2015)
A. S. Oates, Shou-Chung Lee
Electromigration failure distributions of dual damascene Cu /low - k interconnects. Microelectron. Reliab. 46 (9-11) (2006)
Merlyne M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala
Influence of mobility model on extraction of stress dependent source-drain series resistance. Microelectron. Reliab. 44 (1) (2004)
S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza
Characterisation of series resistance degradation through charge pumping technique. Microelectron. Reliab. 43 (4) (2003)
Merlyne M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates
A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. Microelectron. Reliab. 41 (2) (2001)
Wei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates
Hot-carrier-Induced Circuit Degradation for 0.18 µm CMOS Technology. ISQED (2001)