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A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.

Merlyne M. De SouzaJ. WangS. K. ManhasE. M. Sankara NarayananA. S. Oates
Published in: Microelectron. Reliab. (2001)
Keyphrases
  • early stage
  • schottky barrier
  • field effect transistors
  • high density
  • electron beam
  • metal oxide semiconductor
  • multi view
  • integrated circuit
  • real time
  • steady state
  • mathematical analysis
  • semiconductor devices