Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories.
Hee-Dong KimHo-Myoung AnYujeong SeoYongjie ZhangJongsun ParkTae Geun KimPublished in: Microelectron. Reliab. (2010)
Keyphrases
- silicon dioxide
- high temperature
- silicon nitride
- field effect transistors
- thin film
- steady state
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- space charge
- chemical vapor deposition
- high density
- transmission electron microscopy
- metal oxide
- electrical properties
- semiconductor devices
- mathematical analysis
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