Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.
W. A. SasangkaGovindo J. SyaranamualY. GaoRiko I. MadeChee Lip GanCarl V. ThompsonPublished in: Microelectron. Reliab. (2017)
Keyphrases
- high density
- thin film
- low density
- electron microscopy
- close proximity
- high reliability
- high power
- plasma etching
- electrical properties
- magnetic recording
- chemical vapor deposition
- high bandwidth
- metal oxide
- data center
- magnetic tape
- gate dielectrics
- data mining
- field effect transistors
- mobile networks
- mobile users
- mobile agents
- database systems
- neural network