W. A. Sasangka

Publication Activity (10 Years)

Years Active: 2015-2018
Publications (10 Years): 4

Top Topics

Randomly Selected

Electrical Properties

Electron Microscope

Top Venues

Microelectron. Reliab.

Publications

W. A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. (2018)
Riko I. Made, Yu Gao, Govindo J. Syaranamual, W. A. Sasangka, L. Zhang, Xuan Sang Nguyen, Y. Y. Tay, J. S. Herrin, Carl V. Thompson, Chee Lip Gan
Characterisation of defects generated during constant current InGaN-on-silicon LED operation. Microelectron. Reliab. (2017)
W. A. Sasangka, Govindo J. Syaranamual, Y. Gao, Riko I. Made, Chee Lip Gan, Carl V. Thompson
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. Microelectron. Reliab. (2017)
Govindo J. Syaranamual, W. A. Sasangka, Riko I. Made, Subramaniam Arulkumaran, Geok Ing Ng, S. C. Foo, Chee Lip Gan, Carl V. Thompson
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation. Microelectron. Reliab. 64 (2016)
W. A. Sasangka, Govindo J. Syaranamual, Chee Lip Gan, Carl V. Thompson
Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. IRPS (2015)