Characterisation of defects generated during constant current InGaN-on-silicon LED operation.
Riko I. MadeYu GaoGovindo J. SyaranamualW. A. SasangkaL. ZhangXuan Sang NguyenY. Y. TayJ. S. HerrinCarl V. ThompsonChee Lip GanPublished in: Microelectron. Reliab. (2017)