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Impacts of Depth and Lateral Profiles of Fluorine Atoms in Gate Oxide Films on Reliability.
Shuntaro Fujii
Shohei Hamada
Tatsushi Yagi
Isao Maru
Shogo Katsuki
Toshiro Sakamoto
Atsushi Okamoto
Soichi Morita
Tsutomu Miyazaki
Published in:
IRPS (2021)
Keyphrases
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silicon dioxide
gate dielectrics
electrical properties
si sio
leakage current
silicon nitride
metal oxide
field effect transistors
high temperature
low voltage
linear combination
depth information
logic programs
space charge
answer sets
depth map
failure rate
user profiles