Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride.
Jackie ChanHei WongM. C. PoonChi-Wah KokPublished in: Microelectron. Reliab. (2003)
Keyphrases
- chemical vapor deposition
- thin film
- silicon dioxide
- high temperature
- room temperature
- high density
- electron microscopy
- high pressure
- multi layer
- infrared
- electrical properties
- plasma etching
- field effect transistors
- liquid crystal displays
- high levels
- nano scale
- metal oxide
- silicon nitride
- high level
- finite element analysis
- data streams
- neural network
- database