Reliability of SiO2 Gate Dielectric with Semi-Recessed Oxide Isolation.

D. W. Ormond J. R. Gardiner

Published in: IBM J. Res. Dev. (1980)

Keyphrases

silicon dioxide
gate dielectrics
electrical properties
si sio
leakage current
field effect transistors
silicon nitride
high temperature
gate insulator
steady state
space charge
high density
highly reliable
databases
software reliability
reliability analysis
multiresolution
image sequences
case study