Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric.
Kangliang WeiJames EgleyXiaoyan LiuGang DuPublished in: Sci. China Inf. Sci. (2014)
Keyphrases
- leakage current
- silicon dioxide
- space charge
- electrical properties
- low voltage
- gate dielectrics
- chemical vapor deposition
- gate insulator
- high temperature
- high density
- power line
- human computer interaction
- neural network
- social dynamics
- multiple scattering
- cmos technology
- high speed
- wave equation
- human robot interaction
- user interaction
- si sio
- silicon nitride