The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers.
P. ThangaduraiW. D. KaplanV. MikhelashviliGadi EisensteinPublished in: Microelectron. Reliab. (2009)
Keyphrases
- electron beam
- semiconductor devices
- integrated circuit
- x ray
- high temperature
- silicon dioxide
- electron beam lithography
- transmission line
- metal oxide
- design parameters
- physical characteristics
- electrical properties
- space charge
- field effect transistors
- thin film
- multi layer
- chemical vapor deposition
- input output
- power system
- search space