Login / Signup

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor.

Soshi SatoKikuo YamabeTetsuo EndohMasaaki Niwa
Published in: Microelectron. Reliab. (2016)
Keyphrases
  • gate insulator
  • metal oxide semiconductor
  • leakage current
  • low cost
  • integrated circuit
  • low voltage
  • transmission line
  • silicon dioxide
  • objective function
  • high density
  • chemical vapor deposition
  • electrical properties