Yasuhiko Taito

Publication Activity (10 Years)

Years Active: 2003-2024
Publications (10 Years): 11

Top Topics

Write Operations

Top Venues

IEEE J. Solid State Circuits

VLSI Technology and Circuits

Publications

Tomoya Ogawa, Ken Matsubara, Yasuhiko Taito, Tomoya Saito, Masayuki Izuna, Koichi Takeda, Yoshinobu Kaneda, Takahiro Shimoi, Hidenori Mitani, Takashi Ito, Takashi Kono
15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs. ISSCC (2024)
Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono
A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C. IEEE J. Solid State Circuits 59 (4) (2024)
Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C. VLSI Technology and Circuits (2022)
Masaya Nakano, Yoshinobu Kaneda, Satoru Nakanishi, Yasumitsu Murai, Yosuke Tashiro, Yasuhiko Taito, Tomoya Ogawa, Hidenori Mitani, Takashi Ito, Takashi Kono
Density With Charge-Assisted Offset Cancellation Sense Amplifier. IEEE J. Solid State Circuits 57 (10) (2022)
Amir Amirkhany, Tanay Karnik, Shidhartha Das, Jun Deguchi, Yasuhiko Taito
Introduction to the Special Section on the 2021 IEEE International Solid-State Circuits Conference (ISSCC). IEEE J. Solid State Circuits 57 (1) (2022)
Masaya Nakano, Yoshinobu Kaneda, Koichi Takeda, Takahiro Shimoi, Yasunobu Aoki, Satoru Nakanishi, Yosuke Tashiro, Yasuhiko Taito, Ken Matsubara, Munekatsu Nakagawa, Tomoya Ogawa, Takashi Kurafuji, Hidenori Mitani, Takashi Ito, Takashi Kono
A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier. A-SSCC (2021)
Yasuhiko Taito, Violante Moschiano, Shinichiro Shiratake
Session 30 Overview: Non-Volatile Memories Memory Subcommittee. ISSCC (2021)
Takashi Kono, Yasuhiko Taito, Hideto Hidaka
Essential Roles, Challenges and Development of Embedded MCU Micro-Systems to Innovate Edge Computing for the IoT/AI Age. IEICE Trans. Electron. (4) (2020)
Akihiko Kanda, Takashi Kurafuji, Koichi Takeda, Tomoya Ogawa, Yasuhiko Taito, Kazuo Yoshihara, Masaya Nakano, Takashi Ito, Hiroyuki Kondo, Takashi Kono
A 24MB Embedded Flash System Based on 28nm SG-MONOS Featuring 240MHz Read Operations and Robust Over-The-Air Software Update for Automotive. VLSI Circuits (2019)
Yasuhiko Taito, Takashi Kono, Masaya Nakano, Tomoya Saito, Takashi Ito, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi
A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170°C. IEEE J. Solid State Circuits 51 (1) (2016)
Hidenori Mitani, Ken Matsubara, Hiroshi Yoshida, Takashi Hashimoto, Hideaki Yamakoshi, Shinichiro Abe, Takashi Kono, Yasuhiko Taito, Takashi Ito, Takashi Krafuji, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi
7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C. ISSCC (2016)
Yasuhiko Taito, Masaya Nakano, Hiromi Okimoto, Daisuke Okada, Takashi Ito, Takashi Kono, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi
7.3 A 28nm embedded SG-MONOS flash macro for automotive achieving 200MHz read operation and 2.0MB/S write throughput at Ti, of 170°C. ISSCC (2015)
Takeshi Fujino, Akira Yamazaki, Yasuhiko Taito, Mitsuya Kinoshita, Fukashi Morishita, Teruhiko Amano, Masaru Haraguchi, Makoto Hatakenaka, Atsushi Amo, Atsushi Hachisuka, Kazutami Arimoto, Hideyuki Ozaki
A Low Power Embedded DRAM Macro for Battery-Operated LSIs. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (12) (2003)
Yasuhiko Taito, Tetsushi Tanizaki, Mitsuya Kinoshita, Futoshi Igaue, Takeshi Fujino, Kazutami Arimoto
An embedded DRAM with a 143-MHz SRAM interface using a sense-synchronized read/write. IEEE J. Solid State Circuits 38 (11) (2003)