Ken Matsubara

Publication Activity (10 Years)

Years Active: 2016-2024
Publications (10 Years): 8

Top Topics

Top Venues

VLSI Technology and Circuits

Adv. Intell. Syst.

Publications

Tomoya Ogawa, Ken Matsubara, Yasuhiko Taito, Tomoya Saito, Masayuki Izuna, Koichi Takeda, Yoshinobu Kaneda, Takahiro Shimoi, Hidenori Mitani, Takashi Ito, Takashi Kono
15.8 A 22nm 10.8Mb Embedded STT-MRAM Macro Achieving over 200MHz Random-Read Access and a 10.4MB/s Write Throughput with an In-Field Programmable 0.3Mb MTJ-OTP for High-End MCUs. ISSCC (2024)
Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono
A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C. IEEE J. Solid State Circuits 59 (4) (2024)
Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono
A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C. VLSI Technology and Circuits (2022)
Masaya Nakano, Yoshinobu Kaneda, Koichi Takeda, Takahiro Shimoi, Yasunobu Aoki, Satoru Nakanishi, Yosuke Tashiro, Yasuhiko Taito, Ken Matsubara, Munekatsu Nakagawa, Tomoya Ogawa, Takashi Kurafuji, Hidenori Mitani, Takashi Ito, Takashi Kono
A 40nm Embedded SG-MONOS Flash Macro for High-end MCU Achieving 200MHz Random Read Operation and 7.91Mb/mm2 Density with Charge Assisted Offset Cancellation Sense Amplifier. A-SSCC (2021)
Ken Matsubara, Daiki Tachibana, Ryosuke Matsuda, Hiroaki Onoe, Ohmi Fuchiwaki, Hiroki Ota
Hydrogel Actuator with a Built-In Stimulator Using Liquid Metal for Local Control. Adv. Intell. Syst. 2 (5) (2020)
Hiroki Ota, Ken Matsubara
Stretchable Helical Wire Made with Liquid Metal. NEMS (2019)
Ken Matsubara, Tsutomu Nagasawa, Yoshinobu Kaneda, Hidenori Mitani, Hiroshi Sato, Takashi Iwase, Yasunobu Aoki, Keiichi Maekawa, Hideaki Yamakoshi, Takashi Ito, Hiroyuki Kondo, Takashi Kono
A 65nm Silicon-on-Thin-Box (SOTB) Embedded 2T-MONOS Flash Achieving 0.22 pJ/bit Read Energy with 64 MHz Access for IoT Applications. VLSI Circuits (2019)
Hidenori Mitani, Ken Matsubara, Hiroshi Yoshida, Takashi Hashimoto, Hideaki Yamakoshi, Shinichiro Abe, Takashi Kono, Yasuhiko Taito, Takashi Ito, Takashi Krafuji, Kenji Noguchi, Hideto Hidaka, Tadaaki Yamauchi
7.6 A 90nm embedded 1T-MONOS flash macro for automotive applications with 0.07mJ/8kB rewrite energy and endurance over 100M cycles under Tj of 175°C. ISSCC (2016)