Taehui Na

Publication Activity (10 Years)

Years Active: 2013-2023
Publications (10 Years): 17

Top Topics

Gallium Arsenide

Comparative Study

Random Access Memory

Top Venues

IEEE Trans. Very Large Scale Integr. Syst.

IEEE Trans. Circuits Syst. II Express Briefs

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Taehui Na
Ternary Output Binary Neural Network With Zero-Skipping for MRAM-Based Digital In-Memory Computing. IEEE Trans. Circuits Syst. II Express Briefs 70 (7) (2023)
Bayartulga Ishdorj, Taehui Na
Spin-Transfer-Torque Magnetic-Tunnel-Junction-Based Low-Power Nonvolatile Flip-Flop Designs in the Subthreshold Voltage Region. IEEE Trans. Very Large Scale Integr. Syst. 31 (10) (2023)
Bayartulga Ishdorj, Doyeon Kim, Seongmin Ahn, Taehui Na
Offset-Canceling Current-Latched Sense Amplifier With Slow Rise Time Control and Reference Voltage Biasing Techniques. IEEE Trans. Circuits Syst. I Regul. Pap. 70 (7) (2023)
Taehui Na
Offset Voltage Analysis and Enable Signal Rise Time Control Based Offset Reduction Technique of Current-Latched Sense Amplifier. ICEIC (2021)
Taehui Na, Seung-Hyuk Kang, Seong-Ook Jung
STT-MRAM Sensing: A Review. IEEE Trans. Circuits Syst. II Express Briefs 68 (1) (2021)
Taehui Na
Robust Offset-Cancellation Sensing-Circuit-Based Spin-Transfer-Torque Nonvolatile Flip-Flop. IEEE Access 8 (2020)
Gwang Hui Choi, Taehui Na
Novel MTJ-Based Sensing Inverter Variation Tolerant Nonvolatile Flip-Flop in the Near-Threshold Voltage Region. IEEE Access 8 (2020)
Taehui Na, Byungkyu Song, Sara Choi, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 27 (11) (2019)
Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. (1) (2018)
Byungkyu Song, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE Trans. Circuits Syst. II Express Briefs (6) (2017)
Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE J. Solid State Circuits 52 (2) (2017)
Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24 (9) (2016)
Sara Choi, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Area-optimal sensing circuit designs in deep submicrometer STT-RAM. ISCAS (2016)
Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24 (4) (2016)
Beomsang Yoo, Taehui Na, Byungkyu Song, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Equalization scheme analysis for high-density spin transfer torque random access memory. ISOCC (2016)
Sara Choi, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24 (9) (2016)
Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. II Express Briefs (6) (2016)
Byungkyu Song, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. ISLPED (2015)
Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. (7) (2015)
Taehui Na, Hanwool Jeong, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. ICECS (2015)
Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. IEEE Trans. Circuits Syst. II Express Briefs (12) (2015)
Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. (12) (2014)
Taehui Na, Kyungho Ryu, Jisu Kim, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
High-performance low-power magnetic tunnel junction based non-volatile flip-flop. ISCAS (2014)
Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 22 (7) (2014)
Taehui Na, Seung-Han Woo, Jisu Kim, Hanwool Jeong, Seong-Ook Jung
Comparative Study of Various Latch-Type Sense Amplifiers. IEEE Trans. Very Large Scale Integr. Syst. 22 (2) (2014)
Jisu Kim, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. IEEE Trans. Circuits Syst. II Express Briefs (3) (2014)
Taehui Na, Kyungho Ryu, Jisu Kim, Seung-Hyuk Kang, Seong-Ook Jung
A comparative study of STT-MTJ based non-volatile flip-flops. ISCAS (2013)