Jung Pill Kim

Publication Activity (10 Years)

Years Active: 2003-2019
Publications (10 Years): 12

Top Topics

Importance Sampling

Random Access Memory

Top Venues

IEEE Trans. Very Large Scale Integr. Syst.

IEEE Trans. Circuits Syst. II Express Briefs

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Sara Choi, Hong Keun Ahn, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. IEEE Trans. Very Large Scale Integr. Syst. 27 (2) (2019)
Taehui Na, Byungkyu Song, Sara Choi, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 27 (11) (2019)
Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. (1) (2018)
Byungkyu Song, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE Trans. Circuits Syst. II Express Briefs (6) (2017)
Xuebin Zhang, Jiangpeng Li, Hao Wang, Danni Xiong, Jerry Qu, Hyunsuk Shin, Jung Pill Kim, Tong Zhang
Realizing Transparent OS/Apps Compression in Mobile Devices at Zero Latency Overhead. IEEE Trans. Computers 66 (7) (2017)
Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE J. Solid State Circuits 52 (2) (2017)
Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24 (9) (2016)
Sara Choi, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Area-optimal sensing circuit designs in deep submicrometer STT-RAM. ISCAS (2016)
Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24 (4) (2016)
Beomsang Yoo, Taehui Na, Byungkyu Song, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Equalization scheme analysis for high-density spin transfer torque random access memory. ISOCC (2016)
Sara Choi, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24 (9) (2016)
Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. II Express Briefs (6) (2016)
Byungkyu Song, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. ISLPED (2015)
Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. (7) (2015)
Taehui Na, Hanwool Jeong, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. ICECS (2015)
Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. IEEE Trans. Circuits Syst. II Express Briefs (12) (2015)
Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. (12) (2014)
Taehui Na, Kyungho Ryu, Jisu Kim, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
High-performance low-power magnetic tunnel junction based non-volatile flip-flop. ISCAS (2014)
Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. IEEE Trans. Very Large Scale Integr. Syst. 22 (7) (2014)
Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 22 (7) (2014)
Youngdon Jung, Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
An MTJ-based non-volatile flip-flop for high-performance SoC. Int. J. Circuit Theory Appl. 42 (4) (2014)
Jisu Kim, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. IEEE Trans. Circuits Syst. II Express Briefs (3) (2014)
Kyungho Ryu, Jisu Kim, Jiwan Jung, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung
A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop. IEEE Trans. Very Large Scale Integr. Syst. 20 (11) (2012)
Youngdon Jung, Jisu Kim, Kyungho Ryu, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang
MTJ based non-volatile flip-flop in deep submicron technology. ISOCC (2011)
Jung Pill Kim, Woodward Yang, Han-Yuan Tan
A low-power 256-Mb SDRAM with an on-chip thermometer and biased reference line sensing scheme. IEEE J. Solid State Circuits 38 (2) (2003)