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Motoi Ichihashi
Publication Activity (10 Years)
Years Active: 2006-2020
Publications (10 Years): 6
Top Topics
Nm Technology
Metal Oxide Semiconductor
Application Specific
High Density
Top Venues
SoCC
ISQED
ISLPED
ICCAD
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Publications
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Motoi Ichihashi
,
Jia Zeng
,
Youngtag Woo
,
Xuelian Zhu
,
Chenchen Wang
,
James Mazza
Performance Boost Scheme with Activated Dummy Fin in 12-nm FinFET Technology for High-Performance Logic Application.
ISQED
(2020)
Motoi Ichihashi
,
Youngtag Woo
,
Muhammed Ahosan Ul Karim
,
Vivek Joshi
,
David Burnett
10T Differential-Signal SRAM Design in a L4-NM FinFET Technology for High-Speed Application.
SoCC
(2018)
Motoi Ichihashi
,
Jia Zeng
,
Cole Zemke
,
Irene Lin
,
Greg Northrop
,
Ning Jin
,
Jongwook Kye
Sensitivity analysis for SoC performance benchmark against interconnect parasitic resistance and capacitance beyond 10-nm FinFET technology.
SoCC
(2016)
Sandeep Kumar Samal
,
Deepak Nayak
,
Motoi Ichihashi
,
Srinivasa Banna
,
Sung Kyu Lim
How to Cope with Slow Transistors in the Top-tier of Monolithic 3D ICs: Design Studies and CAD Solutions.
ISLPED
(2016)
Jiajun Shi
,
Deepak Nayak
,
Motoi Ichihashi
,
Srinivasa Banna
,
Csaba Andras Moritz
On the Design of Ultra-High Density 14nm Finfet Based Transistor-Level Monolithic 3D ICs.
ISVLSI
(2016)
Sandeep Kumar Samal
,
Deepak Nayak
,
Motoi Ichihashi
,
Srinivasa Banna
,
Sung Kyu Lim
Tier partitioning strategy to mitigate BEOL degradation and cost issues in monolithic 3D ICs.
ICCAD
(2016)
Motoi Ichihashi
,
Hélène Lhermet
,
Edith Beigné
,
Frédéric Rothan
,
Marc Belleville
,
Amara Amara
An On-Chip Multi-Mode Buck DC-DC Converter for Fine-Grain DVS on a Multi-Power Domain SoC Using a 65-nm Standard CMOS Logic Process.
J. Low Power Electron.
6 (1) (2010)
Motoi Ichihashi
,
Hélène Lhermet
,
Edith Beigné
,
Frédéric Rothan
,
Marc Belleville
,
Amara Amara
An On-Chip Multi-mode Buck DC-DC Converter for Fine-Grain DVS on a Multi-power Domain SoC Using a 65-nm Standard CMOS Logic Process.
PATMOS
(2009)
Motoi Ichihashi
,
Haruki Toda
Performance Measurement and Improvement of Asymmetric Three-Tr. Cell (ATC) DRAM toward 0.3V Memory Array Operation.
VLSI Design
(2006)
Koichiro Ishibashi
,
Tetsuya Fujimoto
,
Takahiro Yamashita
,
Hiroyuki Okada
,
Yukio Arima
,
Yasuyuki Hashimoto
,
Kohji Sakata
,
Isao Minematsu
,
Yasuo Itoh
,
Haruki Toda
,
Motoi Ichihashi
,
Yoshihide Komatsu
,
Masato Hagiwara
,
Toshiro Tsukada
Low-Voltage and Low-Power Logic, Memory, and Analog Circuit Techniques for SoCs Using 90 nm Technology and Beyond.
IEICE Trans. Electron.
(3) (2006)